Samsung Electronics, a global leader in advanced
memory technology launched its latest 800GB Solid State Drive (SSD) called
SZ985 Z-SSD. It is specifically offers high level storage for today’s
artificial intelligence (AI), big data and Internet of Things (IoT).
The four-lane 800GB Z-SSD was first developed in
2017. It has a new single port and Z-NAND chips that offers 10X higher cell
read performance than 3-bit V-NAND chips. It also comes with 1.5GB LPDDR4 DRAM
for higher performance control. This new SZ985 Z-SSD delivers 750K IOPS random
read speed, random write speed of up to 170K IOPS and 16ms write latency.
Statistically speaking, it has 1.7 times faster read
speeds and 5 times lesser write latency when compared to an NVMe SSD PM963
(based on 3-bit V-NAND chips).This storage device guarantees up to 30 drive
writes per day (DWPD) for five years, which totals to 42 petabytes. In simple
words, it can store about 8.4 million 5GB-equivalent 1080p movies during a 5
year period. Moreover it has mean time between failures (MTBF) of 2 million
hours.
Samsung is also planning to introduce 240GB version
as well. Both 800GB Z-SSD and 240GB models will be showcased at ISSCC 2018
which is held from February 11th to 15th in San Francisco.
