Toshiba Memory has
today introduced its new Storage Class Memory (SCM) solution XL-FLASH. The new
memory is based on the company’s BiCS FLASH 3D flash memory technology with
1-bit-per-cell SLC, XL-FLASH brings low latency and high performance to data
centre and enterprise storage.
XL-FLASH memory has
been designed to fill the void in between S DRAM and NAND flash, bringing
increased speed reduced latency and higher storage capacities at a lower cost
than traditional DRAM. Toshiba will be initially rolling out the XL-FLASH
memory in SSD formats but the technology could be later expanded to memory
channel attached devices that sit on the DRAM bus, explains today’s press
release from Toshiba.
Features of the new
Toshiba XL-FLASH memory include :
– 128 gigabit (Gb)
die (in a 2-die, 4-die, 8-die package)
– 4 KB page size
for more efficient operating system reads and writes
– 16-plane
architecture for more efficient parallelism
– Fast page read
and program times.
