SK Hynix has introduced its new HBM2E DRAM products
this week offering the industry’s highest bandwidth. Providing 50% higher
bandwidth and 100% additional capacity compared to the previous HBM2. SK
Hynix’s HBM2E supports over 460 GB (Gigabyte) per second bandwidth based on the
3.6 Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os
(Inputs/Outputs). A maximum of eight 16-gigabit chips are vertically stacked,
forming a single, dense package of 16 GB data capacity.
“SK Hynix has established its technological
leadership since its world’s first HBM release in 2013,” said Jun-Hyun Chun,
Head of HBM Business Strategy. “SK Hynix will begin mass production in 2020,
when the HBM2E market is expected to open up, and continue to strengthen its
leadership in the premium DRAM market.”
“SK Hynix’s HBM2E is an optimal memory solution for
the fourth Industrial Era, supporting high-end GPU, supercomputers, machine
learning, and artificial intelligence systems that require the maximum level of
memory performance. Unlike commodity DRAM products which take on module package
forms and mounted on system boards, HBM chip is interconnected closely to
processors such as GPUs and logic chips, distanced only a few µm units apart,
which allows even faster data transfer.”
