Samsung has unveiled its new
sixth-generation V-NAND SSD explicitly designed for client computing. The
latest V-NAND breaks through current cell stacking limitation in 3D NAND with
the industry’s first 100+ layer single-tier design for superior speed and power
efficiency explains Samsung.
“Utilizing Samsung’s unique ‘channel hole etching’
technology, the new V-NAND adds around 40-percent more cells to the previous
9x-layer single-stack structure. This is achieved by building an electrically
conductive mold stack comprised of 136 layers, then vertically piercing
cylindrical holes from top to bottom, creating uniform 3D charge trap flash
(CTF) cells.”
Samsung has started production of 250 GB SATA
solid-state drives and plans to offerhigh-speed, high-capacity SSDs and eUFS
solutions based on its sixth-generation V-NAND
